jiang su changjiang electronics technology co . , ltd to - 92s plastic - encapsulate transistors k 596 s i n - channel junction fet feature s power dissipation p cm : 0 .1 w ? t amb=25 ??? gate current i g : 10ma drain current i d : 1m a drain - source voltage b v gdo : - 20 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteris tics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit gate - drain breakdown voltage bv gd o i g = - 100 | a - 20 v gate - source cut - off voltage v gs(off) v ds = 5v , i d =1 | a - 0.6 - 1.5 v drain cur rent i dss v ds = 5 v , v gs =0 100 800 | a forward transfer admittance | y fs | v ds = 5 v , v gs =0 , f=1 k hz 0.4 1.2 ms input capacitance c iss v ds = 5v , v gs =0 , f=1mhz 3.5 pf output capacitance c rss v ds = 5 v, v gs =0 f = 1mhz 0.65 pf i dss classifica tion classification a b c d e i dss (a) 100 - 170 150 - 240 210 - 350 320 - 480 440 - 800 to - 92s 1. source 2.gate 3. drain 123
d e a a1 c l d1 b e e1 t o-92s p ackage outline dimensions symbol a a1 b c d d1 e e e1 l | min 1.240 0.660 0.380 0.360 3.850 2.970 3.010 2.440 15.100 max 1.620 0.860 0.550 0.510 4.150 3.270 3.310 2.640 15.500 min 0.056 0.026 0.015 0.014 0.152 0.117 0.119 0.096 0.594 max 0.064 0.034 0.022 0.020 0.163 0.129 0.130 0.104 0.610 dimensions in millimeters dimensions in inches 0.050typ 45typ 1.270typ 45typ |
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